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 HMC448
v02.0606
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT
Typical Applications
Features
Output Power: +11 dBm Wide Input Power Range: -4 to +6 dBm Fo, 3Fo Isolation: >20 dBc @ Fout= 20 GHz 100 KHz SSB Phase Noise: -135 dBc/Hz Single Supply: 5V@ 48 mA Die Size: 1.16 mm x 1.20 mm x 0.1 mm
2
FREQUENCY MULTIPLIERS - CHIP
The HMC448 is suitable for: * Clock Generation Applications: SONET OC-192 & SDH STM-64 * Point-to-Point & VSAT Radios * Test Instrumentation * Military & Space
Functional Diagram
General Description
The HMC448 die is a x2 active broadband frequency multiplier chip utilizing GaAs PHEMT technology. When driven by a 0 dBm signal, the multiplier provides +11 dBm typical output power from 19 to 25 GHz. The Fo and 3Fo isolations are >22 dBc up to 22 GHz. This multi-rate frequency multiplier can be used in the generation of a half rate clock for 40 Gbps systems or as part of a multiplier chain to generate a full rate 40 Gbps clock. The HMC448 is also ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -135 dBc/Hz at 100 kHz offset helps maintain good system noise performance. All data is with the chip in a 50 ohm test fixture connected via 0.076mm x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils).
Electrical Specifications, TA = +25 C, Vd1 = Vd2 = 5.0V, 0 dBm Drive Level
Parameter Frequency Range, Input Frequency Range, Output Output Power Fo Isolation (with respect to output level) 3Fo Isolation (with respect to output level) Input Return Loss Output Return Loss SSB Phase Noise (100 kHz Offset) Supply Current (Idd) 5 Min. Typ. 9.5 - 11.0 19 - 22 9 25 25 9 5 -135 48 8 Max. Min. Typ. 11.0 - 12.5 22 - 25 12 15 22 6 5 -135 48 Max. Units GHz GHz dBm dBc dBc dB dB dBc/Hz mA
2 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC448
v02.0606
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT
Output Power vs. Temperature @ 0 dBm Drive Level
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 18 19 20 21 22 23 24 OUTPUT FREQUENCY (GHz)
Output Power vs. Drive Level
16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 18 19 20 21 22 23 24 OUTPUT FREQUENCY (GHz)
2
-6 dBm -4 dBm -2 dBm 0 dBm +2 dBm +4 dBm +6 dBm
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
+25 C +85 C -55 C
25
26
25
26
Output Power vs. Supply Voltage @ 0 dBm Drive Level
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 18 19 20 21 22 23
Isolation @ 0 dBm Drive Level
15 10 OUTPUT POWER (dBm) 5 0 -5 -10 -15 -20 -25
Fo 2Fo 3Fo
Vdd=4.5V Vdd=5.0V Vdd=5.5V
24
25
26
18
19
20
21
22
23
24
25
26
OUTPUT FREQUENCY (GHz)
OUTPUT FREQUENCY (GHz)
Pin vs. Pout @ 3 Frequencies
14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -6 -5 -4 -3 -2 -1 0 1 2 3 INPUT POWER (dBm)
OUTPUT POWER (dBm)
Fout=19 GHz Fout=22 GHz Fout=25 GHz
4
5
6
7
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
2 - 27
FREQUENCY MULTIPLIERS - CHIP
OUTPUT POWER (dBm)
HMC448
v02.0606
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0 -2 OUTPUT RETURN LOSS (dB)
2
INPUT RETURN LOSS (dB)
0
-3
-4 -6 -8 -10 -12 -14 -16 -18
+25 C +85 C -55 C
FREQUENCY MULTIPLIERS - CHIP
-6
-9
+25 C +85 C -55 C
-12
-15 9 10 11 FREQUENCY (GHz) 12 13
-20 18 19 20 21 22 23 24 25 26 FREQUENCY (GHz)
SSB Phase Noise Performance, Fout = 20.4 GHz, Pin = 0 dBm
0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 2 10 SSB PHASE NOISE (dBc/Hz)
10
3
10
4
10
5
10
6
10
7
OFFSET FREQUENCY (Hz)
2 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC448
v02.0606
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT
Absolute Maximum Ratings
RF Input (Vcc= +5V) Supply Voltage (Vd1, Vd2) Channel Temperature Continuous Pdiss (T= 85 C) (derate 7.1 mW/C above 85 C) Thermal Resistance (junction to die bottom) Storage Temperature Operating Temperature +20 dBm +6.0 Vdc 175 C 0.64 W 141.7 C/W -65 to +150 C -55 to +85 C
Typical Supply Current vs. Vdd
Vdd (Vdc) 4.5 5.0 5.5 Idd (mA) 47 48
2
FREQUENCY MULTIPLIERS - CHIP
2 - 29
49
Note: Multiplier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard GP-2 Alternate [2] --
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] Reference this suffix only when ordering alternate die packaging.
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" SQUARE. 4. TYPICAL BOND SPACING IS .006" CENTER TO CENTER. 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE METALIZATION: GOLD 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC448
v02.0606
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT
Pad Description
2
FREQUENCY MULTIPLIERS - CHIP
Pad Number
Function
Description Pin is AC coupled and matched to 50 Ohm from 9.5 - 12.5 GHz.
Interface Schematic
1
RFIN
2, 3
Vd1, Vd2
Supply voltage 5V 0.5V.
4
RFOUT
Pin is AC coupled and matched to 50 Ohm from 19 - 25 GHz.
GND
Die bottom must be connected to RF ground.
Assembly Diagram
2 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC448
v02.0606
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
0.102mm (0.004") Thick GaAs MMIC
Wire 3 mil Ribbon Bond
2
FREQUENCY MULTIPLIERS - CHIP
2 - 31
0.076mm (0.003")
RF Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
0.102mm (0.004") Thick GaAs MMIC
Ribbon Bond 0.076mm (0.003")
RF Ground Plane
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com


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